Srimanta Baishya

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Srimanta Baishya
NationalityIndian
Academic background
Alma materJadavpur University
Academic work
DisciplineElectronics and Communications Engineering
InstitutionsJadavpur University

Srimanta Baishya is an Indian academician and Professor at the National Institute of Technology Silchar in the Department of Electronics and Communications Engineering.[1] He earned his B.E. in electrical engineering from Assam Engineering College in Guwahati, followed by an M.Tech. in electrical engineering from the Indian Institute of Technology Kanpur. Baishya further pursued his Ph.D. in MOS Modeling from Jadavpur University in Kolkata. Presently, he serves as a professor at NIT Silchar, focusing on research areas such as MOS physics, modeling, and MEMS.[2][3]

Career[edit]

In his tenure at NIT Silchar, he has held prominent administrative positions, including the Dean of Academics, Dean of Research & Consultancy, and the Head of the department.[4][5]

Selected bibliography[edit]

Selected articles[edit]

  • S. Baishya, A. Mallik, and C. K. Sarkar, “A Threshold Voltage Model for Short-Channel MOSFETs Taking into Account the Varying Depth of Channel Depletion Layers Around the Source and Drain,” Microelectronics Reliability, pp. 17 – 22, vol. 48, January 2008.[6]
  • S. Baishya, A. Mallik, and C. K. Sarkar, “A Pseudo-two-dimensional Subthreshold Surface Potential Model for Dual-material Gate MOSFETs,” IEEE Transactions on Electron Devices, pp. 2520–2525, vol. 54, September 2007.[7]
  • S. Baishya, A. Mallik, and C. K. Sarkar, “A Surface Potential Based Subthreshold Drain Current Model for Short-channel MOS Transistors,” Semiconductor Science & Technology, pp. 1066–1069, vol. 22, 2007.[8]
  • S. Baishya, A. Mallik, and C. K. Sarkar, “Subthreshold Surface Potential and Drain Current Models for Short-channel Pocket-implanted MOSFETs,” Microelectronic Engineering, vol. 84, pp. 653–662, April 2007.[9]
  • S. Baishya, A. Mallik, and C. K. Sarkar, “A Subthreshold Surface Potential Model for Short-channel MOSFET Taking into Account the Varying Depth of Channel Depletion Layer due to Source and Drain Junctions,” IEEE Transactions on Electron Devices, vol. 53, pp. 507–514, March 2006.[10]

References[edit]

  1. ↑ "Srimanta Baishya". scholar.google.com. Retrieved 2023-09-17.
  2. ↑ "Prof. Srimanta Baishya |". Retrieved 2023-09-17.
  3. ↑ "Vidwan | Profile Page". vidwan.inflibnet.ac.in. Retrieved 2023-09-17.
  4. ↑ josaa.admissions.nic.in https://josaa.admissions.nic.in/seatinfo/root/InstProfile.aspx?instcd=224. Retrieved 2023-09-17. {{cite web}}: Missing or empty |title= (help)
  5. ↑ "INDIAN RESEARCH INFORMATION NETWORK SYSTEM". irins.inflibnet.ac.in. Retrieved 2023-09-17.
  6. ↑ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (2008-01-01). "A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain". Microelectronics Reliability. 48 (1): 17–22. doi:10.1016/j.microrel.2007.01.086. ISSN 0026-2714.
  7. ↑ Baishya, S.; Mallik, A.; Sarkar, C. K. (September 2007). "A Pseudo Two-Dimensional Subthreshold Surface Potential Model for Dual-Material Gate MOSFETs". IEEE Transactions on Electron Devices. 54 (9): 2520–2525. doi:10.1109/TED.2007.903204. ISSN 1557-9646.
  8. ↑ Baishya, S; Mallik, A; Sarkar, C K (2007-09-01). "A surface potential based subthreshold drain current model for short-channel MOS transistors". Semiconductor Science and Technology. 22 (9): 1066–1069. doi:10.1088/0268-1242/22/9/015. ISSN 0268-1242.
  9. ↑ Baishya, Srimanta; Mallik, Abhijit; Sarkar, Chandan Kumar (2007-04-01). "Subthreshold surface potential and drain current models for short-channel pocket-implanted MOSFETs". Microelectronic Engineering. 84 (4): 653–662. doi:10.1016/j.mee.2006.12.008. ISSN 0167-9317.
  10. ↑ Baishya, S.; Mallik, A.; Sarkar, C.K. (March 2006). "A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions". IEEE Transactions on Electron Devices. 53 (3): 507–514. doi:10.1109/TED.2005.864364. ISSN 1557-9646.
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