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		<summary type="html">&lt;p&gt;put up first info initial version - done&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;{{Short description|Indian-born electrical engineer and applied physicist}}&lt;br /&gt;
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[[File:SandipTiwari2021.jpg|alt=Sandip Tiwari|thumb|Sandip Tiwari]]&lt;br /&gt;
&amp;#039;&amp;#039;&amp;#039;Sandip Tiwari&amp;#039;&amp;#039;&amp;#039; is an Indian-born electrical engineer and applied physicist. He is the Charles N. Mellowes Professor of Engineering at [[Cornell University]]. His previous roles were Director of National Nanotechnology Users Network, Director of the [[National Nanotechnology Infrastructure Network]], and research scientist at [[Thomas J. Watson Research Center|IBM T. J. Watson Research Center]]. He is best known for his pioneer research in the fields of SiGe transistor and nanocrystal memory.{{Citation needed|date=July 2022}}&lt;br /&gt;
&lt;br /&gt;
== Early life and education ==&lt;br /&gt;
Sandip Tiwari was born in Ahmedabad, India, received his BTech from [[Indian Institute of Technology, Kanpur]] in 1976. He received his M.Eng. at [[Rensselaer Polytechnic Institute]] and PhD at [[Cornell University]] in 1980.{{Citation needed|date=July 2022}}&lt;br /&gt;
&lt;br /&gt;
== Work and academic career ==&lt;br /&gt;
His early research career was at [[IBM]]&amp;#039;s Research Division until 1999. During this period, he did the early work on compound semiconductor transistors and co-developed the first SiGe transistor.&amp;lt;ref&amp;gt;S.S. Iyer, G.L. Patton, S.S. Delage, S. Tiwari, J.M.C. Stork, &amp;quot;Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy&amp;quot;, International Electron Devices Meeting (1987).&amp;lt;/ref&amp;gt;&amp;lt;ref&amp;gt;G.L. Patton, S.S. Iyer, S.L. Delage, S. Tiwari and J.M.C. Stork, “Silicon-Germanium Base Heterojunction Bipolar Transistors by Molecular Beam Epitaxy,” [[IEEE Electron Device Letters]], EDL-9, No. 4, p. 165 (1988)&amp;lt;/ref&amp;gt; He also pioneered various quantum and nanoscale devices, such as the nanocrystal memory.&amp;lt;ref&amp;gt;S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. Crabbe and K. Chan, “A Silicon Nano-Crystals Based Memory,” Applied Physics Letters, 68, p.1377, 4 Mar. (1996)&amp;lt;/ref&amp;gt; The first demonstration of SiGe transistor was honored as IEEE [[International Electron Devices Meeting]] (IEDM) Top Industry Innovation of 1987.{{Citation needed|date=July 2022}} His work on nanocrystal memory was one of the 50 most-cited papers in the history of Applied Physics Letters in 2013.&amp;lt;ref&amp;gt;{{cite web|url=http://www.numse.nagoya-u.ac.jp/F5/k-ueda/APL-mostcited-paper-2013.pdf|title=Celebrating 50 Years of Applied Physics Letters|website=Numse.nagoya-u.ac.jp|access-date=17 July 2022}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
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At [[Cornell University]], his Nanoscale ElectroScience Research Group&amp;lt;ref&amp;gt;{{Cite web|url=https://www.engineering.cornell.edu/faculty-directory/sandip-tiwari|title=Sandip Tiwari &amp;amp;#124; Cornell Engineering|website=Engineering.cornell.edu}}&amp;lt;/ref&amp;gt;&amp;lt;ref&amp;gt;{{Cite web|url=https://electroscience.ece.cornell.edu/|title=Nanoscale ElectroScience Research Group, ECE Cornell|website=electroscience.ece.cornell.edu}}&amp;lt;/ref&amp;gt; focused on adaptive approaches for low power design,&amp;lt;ref&amp;gt;J. Y. Kim, P. Solomon and S. Tiwari, “Adaptive Circuit Design Using Independently Biased Back-Gated Double-Gate MOSFETS,” IEEE Circuits and Systems I, 59 (4), Apr.., 806-819(2012)&amp;lt;/ref&amp;gt; three-dimensional integration,&amp;lt;ref&amp;gt;L. Xue, C. C. Liu, H.-S. Kim, S (K) Kim, and S. Tiwari, “Three-Dimensional Integration: Technology, Use, and Issues for Mixed-Signal Applications,” IEEE Transactions on Electron Devices, 50, No. 3, 601-609(2003)&lt;br /&gt;
&amp;lt;/ref&amp;gt;&amp;lt;ref&amp;gt;C. C. Liu, I. Ganusov, M. Burtscher, and S. Tiwari, “Bridging the Processor-Memory Performance Gap with 3D IC Technology,” IEEE Design and Test of Computers, Vol. 22, Nov., 556-564(2005)&lt;br /&gt;
&amp;lt;/ref&amp;gt; inexact computing,&amp;lt;ref&amp;gt;J. Y. Kim and S. Tiwari, “Inexact Computing using Probabilistic Circuits: Ultra Low-Power Digital Processing”, ACM Journal of Emerging Technologies, Vol. 10, No. 2, Article 16, February (2014)&amp;lt;/ref&amp;gt; and Bayesian implementations&amp;lt;ref&amp;gt;S. Tiwari and D. Querlioz, “On the physical underpinnings of the unusual effectiveness of probabilistic and neural computation,” Invited paper, Tech. Dig. of IEEE Int’l Conf. on Rebooting Computing, 1--4(2017)&amp;lt;/ref&amp;gt;&amp;lt;ref&amp;gt;{{Cite web|url=https://ieeetv.ieee.org/on-the-physical-underpinnings-of-the-unusual-effectiveness-of-probabilistic-and-neural-computation-ieee-rebooting-computing-2017|title=On the Physical Underpinnings of the Unusual Effectiveness of Probabilistic and Neural Computation - IEEE Rebooting Computing 2017|website=[[IEEE]] |date=8 December 2017 }}&amp;lt;/ref&amp;gt;&lt;br /&gt;
&lt;br /&gt;
== Selected awards and honors ==&lt;br /&gt;
* [[IEEE Cledo Brunetti Award]], 2007&amp;lt;ref&amp;gt;{{cite web|url=https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/brunetti-rl.pdf|archive-url=https://web.archive.org/web/20211216193824/https://www.ieee.org/content/dam/ieee-org/ieee/web/org/about/awards/recipients/brunetti-rl.pdf|url-status=dead|archive-date=December 16, 2021|title=IEEE CLEDO BRUNETTI AWARD : Recipients|website=Ieee.org|access-date=17 July 2022}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* [[IIT Kanpur]] Distinguished Alumni Award, 2003&amp;lt;ref&amp;gt;{{Cite web|url=https://iitkalumni.org/daa-awardees|title=Past DAA Awardees|website=Iitkalumni.org}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* International Symposium on Compound Semiconductors (ISCS) Young Scientist Award, 1991&amp;lt;ref&amp;gt;{{Cite web|url=https://www.csw2018.org/iscs-young-scientist-award|title=ISCS Young Scientist Award|website=Csw2018.org}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* Founding Editor-in-Chief of [[IEEE Transactions on Nanotechnology]], 2002&amp;lt;ref&amp;gt;{{Cite journal|title=Introduction and information on editorial board|first=S.|last=Tiwari|date=March 15, 2002|journal=IEEE Transactions on Nanotechnology|volume=1|issue=1|pages=1–3|doi=10.1109/TNANO.2002.1005420|bibcode=2002ITNan...1....1T }}&amp;lt;/ref&amp;gt;&amp;lt;ref&amp;gt;{{Cite web|url=https://ethw.org/Sandip_Tiwari|title=Sandip Tiwari|date=July 8, 2022|website=Ethw.org}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* Guest Editor of [[Proceedings of the IEEE]], 2015&amp;lt;ref&amp;gt;{{Cite journal|title=Memories in the Future of Information Processing|first=Sandip|last=Tiwari|date=August 15, 2015|journal=Proceedings of the IEEE|volume=103|issue=8|pages=1247–1249|doi=10.1109/JPROC.2015.2448912|doi-access=free}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* Fellow of [[American Physical Society]], 1998&amp;lt;ref&amp;gt;{{Cite web|url=http://www.aps.org/programs/honors/fellowships/archive-all.cfm|title=APS Fellow Archive|website=Aps.org}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* Life Fellow of [[IEEE]], 1994&amp;lt;ref&amp;gt;{{Cite web|url=https://services27.ieee.org/fellowsdirectory/getdetailprofile.html?custNum=x92aFsS3hFpUK4GhzPZUYQ==&amp;amp;bccaptions=Alphabetical+Listing+&amp;amp;bclocations=/fellowsdirectory/home.html|title=IEEE Fellows Directory - Member Profile|website=[[IEEE]]}}&amp;lt;/ref&amp;gt;&lt;br /&gt;
&lt;br /&gt;
== Selected publications ==&lt;br /&gt;
=== Books ===&lt;br /&gt;
* S. Tiwari, Quantum, Statistical and Information Mechanics: A Unified Introduction, Electroscience series, Vol. 1, Oxford University Press, {{ISBN|978-0-19-875985-0}}&lt;br /&gt;
* S. Tiwari, Device Physics: Fundamentals of Electronics and Optoelectronics, Electroscience series, Vol. 2, Oxford University Press, {{ISBN|978-0-19-875984-3}}, (2022)&lt;br /&gt;
* S. Tiwari, Semiconductor Physics: Principles, Theory and Nanoscale, Electroscience series, Vol. 3, Oxford University Press, {{ISBN|978-0-19-875986-7}}, (2020)&lt;br /&gt;
* S. Tiwari, Nanoscale Device Physics: Science and Engineering Fundamentals, Electroscience series, Vol. 4, Oxford University Press, {{ISBN|978-0-19-875987-4}} (2017)&lt;br /&gt;
* S. Tiwari, Compound Semiconductor Device Physics, Academic Press, Inc., (1992) and Elsevier, {{ISBN|978-0-12-691740-6}} (1992); Updated edition available as [https://electroscience.ece.cornell.edu/index.php?page=openbooks Open Text] from group website&lt;br /&gt;
&lt;br /&gt;
=== Papers ===&lt;br /&gt;
* S. Tiwari, Implications of Scales in Processing of Information, Invited Paper, in Proceedings of the IEEE, vol. 103, no. 8, 1250-1273 (2015)&amp;lt;ref&amp;gt;{{Cite journal|title=Implications of Scales in Processing of Information|first=Sandip|last=Tiwari|date=August 15, 2015|journal=Proceedings of the IEEE|volume=103|issue=8|pages=1250–1273|doi=10.1109/JPROC.2015.2448936|s2cid=12464832 }}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* {{Cite journal|url=http://aip.scitation.org/doi/10.1063/1.116085 |title=A silicon nanocrystals based memory |first1=Sandip |last1=Tiwari |first2=Farhan |last2=Rana |first3=Hussein |last3=Hanafi |first4=Allan |last4=Hartstein |first5=Emmanuel F. |last5=Crabbé |first6=Kevin |last6=Chan |date=March 4, 1996 |journal=Applied Physics Letters |volume=68 |issue=10 |pages=1377–1379 |doi=10.1063/1.116085|bibcode=1996ApPhL..68.1377T |url-access=subscription }}&amp;lt;ref&amp;gt;{{Cite journal|url=http://aip.scitation.org/doi/10.1063/1.116085 |title=A silicon nanocrystals based memory |first1=Sandip |last1=Tiwari |first2=Farhan |last2=Rana |first3=Hussein |last3=Hanafi |first4=Allan |last4=Hartstein |first5=Emmanuel F. |last5=Crabbé |first6=Kevin |last6=Chan |date=March 4, 1996 |journal=Applied Physics Letters |volume=68 |issue=10 |pages=1377–1379 |doi=10.1063/1.116085|bibcode=1996ApPhL..68.1377T |url-access=subscription }}&amp;lt;/ref&amp;gt;&lt;br /&gt;
* {{Cite journal|url=https://ieeexplore.ieee.org/document/2069 |title=A new effect at high currents in heterostructure bipolar transistors |first=S. |last=Tiwari |date=March 15, 1988 |journal=IEEE Electron Device Letters |volume=9 |issue=3 |pages=142–144 |via=IEEE Xplore |doi=10.1109/55.2069|bibcode=1988IEDL....9..142T |s2cid=39623450 |url-access=subscription }}&amp;lt;ref&amp;gt;{{Cite journal|url=https://ieeexplore.ieee.org/document/2069 |title=A new effect at high currents in heterostructure bipolar transistors |first=S. |last=Tiwari |date=March 15, 1988 |journal=IEEE Electron Device Letters |volume=9 |issue=3 |pages=142–144 |via=IEEE Xplore |doi=10.1109/55.2069|bibcode=1988IEDL....9..142T |s2cid=39623450 |url-access=subscription }}&amp;lt;/ref&amp;gt;&lt;br /&gt;
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== References ==&lt;br /&gt;
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{{reflist}}&lt;br /&gt;
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{{Authority control}}&lt;br /&gt;
{{DEFAULTSORT:Tiwari, Sandip}}&lt;br /&gt;
[[Category:Year of birth missing (living people)]]&lt;br /&gt;
[[Category:Living people]]&lt;br /&gt;
[[Category:Fellows of the IEEE]]&lt;br /&gt;
[[Category:Fellows of the American Physical Society]]&lt;br /&gt;
[[Category:Cornell University College of Engineering faculty]]&lt;br /&gt;
[[Category:IIT Kanpur alumni]]&lt;br /&gt;
[[Category:IBM Research computer scientists]]&lt;br /&gt;
[[Category:Cornell University College of Engineering alumni]]&lt;br /&gt;
[[Category:Indian electrical engineers]]&lt;br /&gt;
[[Category:Indian physicists]]&lt;br /&gt;
[[Category:Rensselaer Polytechnic Institute alumni]]&lt;/div&gt;</summary>
		<author><name>Cornelius R</name></author>
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